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The FX5596H is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE (Bands 39 & 34 1880-1920MHz and 2010-2025MHz), with matched 50-Ohm RF input and output ports. The FEM also supports UMTS/LTE applications through 14 high linearity TRx ports.

The FX5596H consists of a GaAs HBT power amplifier, a SOI SP16T antenna switch,and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The embedded SP16T switch enables up to 14 TRx ports with low insertion loss and high linearity, including 1 ultra-low insertion loss ports. The FX5596H also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mmx5.3mmx0.75mm package, the FX5596H greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD_LTE solution, facilitates the customer's implementation, and saves board room and cost significantly.