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The FX5808A is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE(GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE/5G-NR (Bands 39 & 34), with matched 50-Ohm RF input and output ports. The FEM also supports UMTS/LTE applications through 16 high linearity TRx ports.

The FX5808A consists of a GaAs HBT power amplifier, a SOI SP4T, a SOI SP6T, a SOI SP8T antenna switch, and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The TRx ports are partitioned into three independent switch blocks, comprising 7 LB ports, 5 MB ports and 4 HB ports. Each switch block includes an integrated directional cou

pler that may be monitored on the CPL port with selectable forward or reverse directionality. A built-in diplexer and dual antenna configration provides simultaneous LB and M/HB reception required for downlink CA . The FX5808A also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mmx5.5mmx0.75mm package, the FX5808A greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD-LTE/5GNR solution, facilitates the customer’s implementation, and saves board room and cost significantly.