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The FX5627N is a 42-pin power amplifier module developed for high linearity applications. With advanced InGaP HBT technology, the module supports multi-band CDMA&WCDMA&TD-SCDMA&FDD-LTE&TDD-LTE&5G NR application, including CDMA Bands BC0/BC1/BC4/BC6/BC10/BC15, WCDMA Band1/2/3/4/5/8/9, TDSCDMA Band34/39, FDD-LTE&5G-NR Band1/2/3/4/5/7/8/9/12/13/17/20/26/28/30/71, TDD-LTE Band&5G-NR 38/39/40/41.Uplink Carrier Aggregation (CA) support for Intraband and outband. The FX5627N meets the stringent linearity requirements of LTE QPSK and 5G NR DFT-s-OFDM & CP-OFDM specifications.

The FX5627N is self contained with three GaAs power amplifiers for low, mid and high bands, a CMOS controller, a SOI 2P2T switch, two SP5T switches and input & output matching networks. The GaAs PA provides RF amplification in linear mode, while the CMOS controller provides regulated voltage through MIPI RFFE interface. The integrated SOI switch supports band selection and Tx/Rx function. The module is fully matched to 50 ohms at all RF ports.

With Lansus’s state-of-the-art technology and optimized bias table, the FX5627N reduces current consumption significantly in both high and low power operations. Compatible with APT (Average Power Tracking) technology to extend battery life, the FX5627N efficiency can be further improved with VCC1/VCC2 supplied from DC-DC converter, which can be set from 0.5~3.4V accordingly to different output power level.

Packaged in a 4mm x 6.8mm x 0.75mm module, the FX5627N performs with high efficiency, high linearity, low temperature variation, strong reliability and robust ruggedness. In addition to the feature of RoHS compliant, the FX5627N is free of hazardous substances and rated as green product.