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The FX5625 is a 42-pin power amplifier module developed for high linearity applica­tions. With advanced lnGaP HBT technology, the module supports multi-band LTE&5G NR application,  including FDD-LTE&5G-NR  Band 7. TDD-LTE &5G-NR  Band 38, 41. The FX5625 meets the stringent linearity requirements of LTE QPSK and 5G NR OFT-s-OFDM & CP-OFDM specifications. 

The FX5625 is self contained with a GaAs power amplifiers for high band, a CMOS controller, a 3P4T switch and input & output matching networks. The GaAs PA provides RF amplification in linear mode, while the CMOS controller provides regulated voltage through MIPI RFFE interface. The integrated SOI switch supports  band selection. The module is fully matched to 50 ohms at all RF ports.  

With Lansus's state-of-the-art technology and optimized bias table, the FX5625 reduces current consumption significantly in both high and low power operations. Compatible with APT(Average Power Tracking) technology to extend battery life，the FX5625 efficiency can be further improved with VCC supplied from DC-DC converter, which can be set from 0.55~4.6V accordingly to different output power level. 

Packaged in a 4mm x 6.8mm x 0.75mm module, the FX5625 performs with high efficiency, high linearity, low temperature variation, strong reliability and robust ruggedness. In addition to the feature  of RoHS compliant, the FX5625 is free of hazardous substances and rated as green product.